SJ 797-1974
3DG161型NPN硅平面高频小功率高反压三极管
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
1974-10-01
SJ/T 1480-2016
半导体分立器件 3CG130型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG130 high frequency low power PNP silicon transistor
2016-04-05
SJ/T 1477-2016
半导体分立器件 3CG120型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG120 high frequency low power PNP silicon transistor
2016-04-05
SJ/T 1472-2016
半导体分立器件 3CG110型硅ＰＮＰ高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG110 high frequency low power PNP silicon transistor
2016-04-05
SJ 50033/177-2018
半导体分立器件 3CG2604、3CG2604UB型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CG2604 and3CG2604UB high frequency low power PNP silicon transistors
2018-01-18
SJ 50033/178-2018
半导体分立器件 3CG2605、3CG2605UB型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CG2605 and3CG2605UB high frequency low power PNP silicon transistors
2018-01-18
SJ 50033/191-2018
半导体分立器件 3CK3637、3CK3637UB型硅PNP高频大功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CG3637 and3CG3637UB high frequency low power PNP silicon transistors
2018-01-18
SJ 50033/179-2018
半导体分立器件 3CK2904、3CK2905型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK2904 and3CK2905 high frequency low power switching PNP silicon transistors
2018-01-18
SJ 50033/182-2018
半导体分立器件 3CK3250、3CK3250UB型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK3250 and3CK3250UB high frequency low power switching PNP silicon transistors
2018-01-18
SJ 50033/183-2018
半导体分立器件 3CK3251、3CK3251UB型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK3251 and3CK3251UB high frequency low power switching PNP silicon transistors
2018-01-18
SJ/T 1486-2016
半导体分立器件 3CG180型硅ＰＮＰ高频高反压小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG180 high frequency high voltage low power PNP silicon transistor
2016-04-05
BS 9364 N007 AND N009-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
BS 9364 N013-1979
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 25伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N016-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N011-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
SJ 20015-1992
半导体分立器件 GP,GT和GCT级 3DG130型NPN硅高频小功率晶体管详细规范
Semiconductor discrete device Detail specification for PNP silicon high-frequency low-power transistor for types 3DG130 GP、GT and types GCT classes
1992-02-01
BS 9364 N012-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1978-07-15
BS 9364 N017-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1979-01-15
BS 9364 N008 AND N010-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1978-07-15