作废 JB 4192-1986
双向晶闸管 双向晶闸管
发布日期:
实施日期:
分类信息
发布单位或类别: 中国 行业标准-机械
CCS分类: J46机械 - 工艺装备 - 模具
ICS分类:
标准简介
相似标准/计划/法规
JB/T 4192-1996
双向晶闸管
Bi-directional thyristor
1996-11-07
BS 5817-18-1989
Specification for audiovisual, video and television equipment and systems-Specification for connectors for automatic slide projectors with built-in triacs for audiovisual application
视听、视频和电视设备及系统规范 视听用带内置双向晶闸管的自动幻灯机连接器规范
1989-08-31
UNE 20637-18-1993
AUDIOVISUAL, VIDEO AND TELEVISION EQUIPMENT AND SYTEMS. PART 18: CONNECTORS FOR AUTOMATIC SLIDE PROJECTORS WITH BUILT-IN TRIACS FOR AUDIOVISUAL APPLICATION.
视听、视频和电视设备及系统 第18部分:视听用内置双向晶闸管自动幻灯机连接器
1993-11-23
JB/T 7619-1994
双向三极晶闸管测试方法
Test method for two-way triple pole thyristors
1994-12-09
DIN IEC 60574-18
Audiovisual, video and television equipment and systems; connectors for automatic slide projectors with built-in triacs for audiovisual applications; identical with IEC 60574-18:1987; german version HD 369.18 S1:1989
视听、视频和电视设备及系统;用于自动幻灯放映机的连接器 带有用于视听应用的内置双向晶闸管;与IEC 60574-18:1987相同;德语版HD 369.18 S1:1989
1991-04-01
MIL MIL-S-19500/438
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
半导体器件 三极晶闸管(双向) 硅 2N5806-2N5809型
1970-08-20
MIL MIL-S-19500/438 Notice 2-Inactivation
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
半导体器件 三极晶闸管(双向) 硅 2N5806至2N5809型
1999-06-07
MIL MIL-S-19500/438 Notice 3-Validation
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
半导体器件 三极晶闸管(双向) 硅 2N5806至2N5809型
2004-03-24
MIL MIL-S-19500/438 Notice 1-Validation
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
半导体器件 三极晶闸管(双向) 硅 2N5806至2N5809型
1988-08-24
KS C IEC 60747-6-2(2021 Confirm)
반도체 소자-개별 소자-제6부:사이리스터-제2절:100 A 이하의 주위 및 케이스 정격 양방향 3극 사이리스터(트라이액)의 개별 규격 지침
半导体器件分立器件第6部分:晶闸管第二节:100A以下环境或外壳额定双向三极晶闸管空白详细规范
2006-12-11
KS C IEC 60747-6-2(2016 Confirm)
반도체 소자-개별 소자-제6부:사이리스터-제2절:100 A 이하의 주위 및 케이스 정격 양방향 3극 사이리스터(트라이액)의 개별 규격 지침
半导体器件分立器件第6部分:晶闸管第二节:100A及以下环境或外壳额定双向三极晶闸管空白详细规范
2006-12-11
MIL MIL-S-19500/438 Amendment 1
SEMICONDUCTOR DEVICE, TRIODE THYRISTOR (BI-DIRECTIONAL), SILICON, TYPES 2N5806 THROUGH 2N5809
半导体器件 三极晶闸管(双向) 硅 类型2N5806通过2N5809
1976-01-15
GB/T 13150-2005
半导体器件 分立器件 电流大于 100A、环境和管壳额定的双向三极晶闸管空白详细规范
Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
2005-03-23
BS QC 750111-1991
Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Bidirectional triode thyristors (triacs), ambient or case-rated, up to 100 A
电子元件质量评定协调体系规范 半导体分立器件 空白详细规范 双向三极晶闸管(TRIAC) 环境或外壳额定 高达100 A
1992-01-31
晶闸管双向

最后更新时间 2025-08-28