现行 YS/T 1653-2023
氮化镓衬底片 氮化镓衬底片
发布日期:2023-12-20
实施日期:2024-07-01
分类信息
研制信息

归口单位: 工业和信息化部

标准简介

本文件适用于半导体光电器件与电子器件用氮化镓衬底片的研发生产、测试检验等相关领域

相似标准/计划/法规
GB/T 37053-2018
氮化镓外延片及衬底片通用规范
General specification for epitaxial wafers and substrates based on gallium nitride
2018-12-28
GB/T 41751-2022
氮化镓单晶衬底片晶面曲率半径测试方法
Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
2022-10-12
GB/T 36705-2018
氮化镓衬底片载流子浓度的测试 拉曼光谱法
Test method for carrier concentration of gallium nitride substrates—Raman spectrum method
2018-09-17
GB/T 32188-2015
氮化镓单晶衬底片x射线双晶摇摆曲线半高宽测试方法
The method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
2015-12-10
KS C IEC 63229
반도체 소자 — 탄화규소 기판 상의 질화갈륨 에피택셜 필름의 결함 분류
半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类
2025-01-31
IEC 63229-2021
Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类
2021-04-07
GB/T 32189-2015
氮化镓单晶衬底表面粗糙度的原子力显微镜检验法
Test method for surface roughness of GaN single crystal substrate by atomic force microscope
2015-12-10
衬底氮化

最后更新时间 2025-09-02