KS C IEC 60747-8
반도체 소자 — 개별 소자 —제8부: 전계 효과 트랜지스터
半导体器件 - 分立器件 - 第8部分:场效应晶体管
2020-12-31
GB/T 4586-1994
半导体器件 分立器件 第8部分:场效应晶体管
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors
1994-12-30
IEC 60747-8-2010+AMD1-2021 CSV
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
半导体器件分立器件第8部分:场效应晶体管
2021-06-25
IEC 60747-8-2010
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
半导体器件 - 分立器件 - 第8部分:场效应晶体管
2010-12-15
IEC 60747-8-2010/AMD1-2021
Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
修改件1.半导体器件.分立器件.第8部分:场效应晶体管
2021-06-25
GB/T 6219-1998
半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
1998-11-17
DIN IEC 60747-8-DRAFT
Draft Document - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors (IEC 47E/320/CD:2007)
文件草案.半导体器件.分立器件.第8部分:场效应晶体管（IEC 47E/320/CD:2007）
2007-06-01
SJ/T 9014.8.2-2018
半导体器件 分立器件第8-2部分：超结金属氧化物半导体场效应晶体管空白详细规范
Semiconductor devices-Discrete devices Part 8-2: Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors
2018-04-30
SJ 20184-1992
半导体分立器件 CS3821、3822、3823型场效应晶体管详细规范
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821、3822、3823
1992-11-19
GB/T 21039.1-2007
半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
2007-06-29
SJ 50033/42-1994
半导体分立器件 CS0467型砷化镓微波场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0467 GaAs microwave FET
1994-09-30
SJ 50033/78-1995
半导体分立器件 ＣＳ０４６４型砷化镓微波场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS0464 GaAs microwave FET
1995-05-25
SJ 50033.52-1994
半导体分立器件 CS0529型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0529 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033.54-1994
半导体分立器件 CS0532型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0532 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033/79-1995
半导体分立器件 ＣＳ０５３６型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS0536 GaAs microwave power FET
1995-05-25
SJ 50033/80-1995
半导体分立器件 ＣＳ０５１３型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS0513 GaAs microwave FET
1995-05-25
SJ 50033/81-1995
半导体分立器件 ＣＳ０５２４型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS0524 GaAs microwave FET
1995-05-25
SJ 50033/119-1997
半导体分立器件 CS204型砷化镓微波功率 场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
SJ 50033/120-1997
半导体分立器件 CS205型砷化镓微波功率 场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
SJ 20061-1992
半导体分立器件 CS146型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146
1992-11-19