现行 SJ 20068-1992
半导体分立器件 2DW14~18型低噪声硅电压基准二极管详细规范 半导体分立器件 2DW14~18型低噪声硅电压基准二极管详细规范 Semiconductor discrete device Detail specification for lower noise for silicon voltage reference diode for type 2DW14~18
发布日期:1992-11-19
实施日期:1993-05-01
分类信息
研制信息

起草单位: 中国电子技术标准化研究所、 杭州无线电二厂

起草人: 王董文、 于志贤

标准简介

本规范规定了2DW14~18型低噪声硅电压基准二极管的详细要求。该种器件按GJB 33《半导体分立器件总规范》的规定,提供产品保证的三个等级(GP、GT和GCT级)

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半导体分立基准电压器件

最后更新时间 2025-08-29