现行 SJ 20183-1992
半导体分立器件3DD6型功率晶体管详细规范 半导体分立器件3DD6型功率晶体管详细规范 Semiconductor discrete device Detail specification for type 3DD6 power transistor
发布日期:1992-11-19
实施日期:1993-05-01
分类信息
研制信息

起草单位: 中国电子技术标准化研究所

起草人: 蔡仁明、 任慧敏、 周志坤、 罗德炎

标准简介

本规范规定了3DD6B~I型功率开关晶体管的详细要求。每种器件均按GJB 33《半导体分立器件总规范》的规定,提供产品保证的三个等级(GP、GT和GCT级)

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最后更新时间 2025-08-29