SJ 50033.52-1994
半导体分立器件 CS0529型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0529 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033.54-1994
半导体分立器件 CS0532型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0532 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033/119-1997
半导体分立器件 CS204型砷化镓微波功率 场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
SJ 50033/120-1997
半导体分立器件 CS205型砷化镓微波功率 场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
BS IEC 60747-4-1-2000
Semiconductor devices. Discrete devices-Microwave diodes and transistors. Microwave field effect transistors. Blank detail specification-BDS for microwave field-effect transistors
半导体器件 分立器件
2000-09-15
SJ 50033.53-1994
半导体分立器件 CS0530、CS0531型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033/106-1996
半导体分立器件 ＣＳ２０３型砷化镓微波低噪声场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS203 GaAs microwave low noise field effect transistor
1996-08-30
SJ/T 9014.8.2-2018
半导体器件 分立器件第8-2部分：超结金属氧化物半导体场效应晶体管空白详细规范
Semiconductor devices-Discrete devices Part 8-2: Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors
2018-04-30
GB/T 6219-1998
半导体器件 分立器件 第8部分:场效应晶体管 第一篇 1 GHz、5 W以下的单栅场效应晶体管 空白详细规范
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
1998-11-17
SJ 20061-1992
半导体分立器件 CS146型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146
1992-11-19
GB/T 21039.1-2007
半导体器件 分立器件 第4-1部分：微波二极管和晶体管 微波场效应晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
2007-06-29
SJ 50033/83-1995
半导体分立器件 ＣＳ１３９型硅Ｐ沟道ＭＯＳ增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/84-1995
半导体分立器件 ＣＳ１４０型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/85-1995
半导体分立器件 ＣＳ１４１型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/86-1995
半导体分立器件 ＣＳ５１１４～ＣＳ５１１６型硅Ｐ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ５１１４～ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/87-1995
半导体分立器件 ＣＳ４０９１～ＣＳ４０９３型硅Ｎ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ４０９１～ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/88-1995
半导体分立器件 ＣＳ６７６０和ＣＳ６７６２型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/89-1995
半导体分立器件 ＣＳ６７６８和ＣＳ６７７０型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/38-1994
半导体分立器件 CS4856～CS4861型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS4856～CS4861 silicon N-channel deplition mode field-effect transistor
1994-09-30
SJ 50033/121-1997
半导体分立器件CS3458-CS3460型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors
1997-06-17