SJ 20061-1992
半导体分立器件 CS146型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146
1992-11-19
SJ 50033/121-1997
半导体分立器件CS3458-CS3460型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors
1997-06-17
SJ 50033/122-1997
半导体分立器件CS3684-CS3687型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors
1997-06-17
SJ 50033/38-1994
半导体分立器件 CS4856～CS4861型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS4856～CS4861 silicon N-channel deplition mode field-effect transistor
1994-09-30
MIL MIL-PRF-19500/428H Notice 1-Validation
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTSV和JANS
2016-05-24
MIL MIL-PRF-19500/428H
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTXV和JANS
2011-08-08
MIL MIL-PRF-19500/428G Notice 1-Validation
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
半导体器件 场效应晶体管 N沟道硅 2N4416A和2N4416AUB型 JAN JANTX JANTSV和JANS
2011-07-01
SJ 20011-1992
半导体分立器件 GP,GT和GCT级 CS1型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes
1992-02-01
SJ 20012-1992
半导体分立器件 GP,GT和GCT级 CS4型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes
1992-02-01
SJ 20013-1992
半导体分立器件 GP,GT和GCT级 CS10型硅N沟道耗尽型场效应晶体管
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes
1992-02-01
SJ 50033/84-1995
半导体分立器件 ＣＳ１４０型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/85-1995
半导体分立器件 ＣＳ１４１型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/83-1995
半导体分立器件 ＣＳ１３９型硅Ｐ沟道ＭＯＳ增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/86-1995
半导体分立器件 ＣＳ５１１４～ＣＳ５１１６型硅Ｐ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ５１１４～ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/87-1995
半导体分立器件 ＣＳ４０９１～ＣＳ４０９３型硅Ｎ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ４０９１～ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/88-1995
半导体分立器件 ＣＳ６７６０和ＣＳ６７６２型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/89-1995
半导体分立器件 ＣＳ６７６８和ＣＳ６７７０型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor
1995-05-25
MIL MIL-PRF-19500/428D Amendment 1
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A, JAN JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/428C) (S/S BY MIL-PRF-19500/428E)
半导体器件 场效应晶体管 N沟道硅 2N4416A型 JAN-JANTX JANTXV和JANS（取代MIL-PRF-19500/428C）（S/S由MIL-PRF-198500/428E代替）
2001-02-22
MIL MIL-PRF-19500/428D Amendment 2
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A, JAN JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/428C) (S/S BY MIL-PRF-19500/428E)
半导体器件 场效应晶体管 N沟道硅 2N4416A型 JAN-JANTX JANTXV和JANS（取代MIL-PRF-19500/428C）（S/S由MIL-PRF-198500/428E代替）
2001-08-16