JB/T 8757-1998
电力半导体器件用热管散热器
Hot pipe radiators intended to be used in power semiconductor devices
1998-05-26
JB/T 7622-1994
电力半导体器件工艺用有机硅漆
Organosilicone lacquer intended to be used in power semiconductor device production process
1994-12-09
BS IEC 63068-3-2020
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2020-07-24
BS IEC 63068-1-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-05-10
BS IEC 63068-2-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-02-08
KS C IEC 63068-3
반도체 소자 — 전력 소자용 탄화규소 호모에피택셜 웨이퍼의 결함에 대한 비파괴 인식 기준 — 제3부: 광발광을 사용한 결함 검사 방법
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法
2025-01-31
GB/T 43493.3-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
2023-12-28
IEC 63068-3-2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法
2020-07-13
JB/T 8320-1996
电力半导体器件工艺用涂层石英玻璃管
Coated quartz glass tubes intended to be used in the production process of power semiconductor devices
1996-04-11
KS C IEC 63068-1
반도체 소자 — 전력 소자용 탄화규소 호모에피택셜 웨이퍼의 결함에 대한 비파괴 인식 기준 — 제1부: 결함의 분류
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类
2025-01-31
GB/T 43493.1-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
2023-12-28
IEC 63068-1-2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第1部分:缺陷分类
2019-01-30
KS C IEC 63068-2
반도체 소자 — 전력 소자용 탄화규소 호모에피택셜 웨이퍼의 결함에 대한 비파괴 인식 기준 — 제2부: 광학 검사를 사용한 결함 검사 방법
半导体器件 功率器件用碳化硅同质外延晶片缺陷的无损识别准则 第2部分:用光学检查法检测缺陷的试验方法
2025-01-31
GB/T 43493.2-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
2023-12-28
IEC 63068-2-2019
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第2部分:光学检验缺陷的试验方法
2019-01-30
KS C IEC 63068-4
반도체 소자 — 전력 소자용 탄화규소 호모에피택셜 웨이퍼의 결함에 대한 비파괴 인식 기준 — 제4부: 광학 검사와 광발광을 결합한 방법을 사용하여 결함을 식별하고 평가하는 절차
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第4部分:使用光学检查和光致发光组合方法识别和评估缺陷的程序
2025-01-31
IEC 63068-4-2022
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第4部分:使用光学检查和光致发光组合方法识别和评估缺陷的程序
2022-07-27
MIL MIL-S-19500/424A Notice 1-Validation
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER, 1N5186, 1N5187, 1N5188, AND 1N5190, JAN, JANTX, AND JANTXV (USE MIL-S-19500/411) (SUPERSEDING MIL-S-19500/424)(S/S BY MIL-PRF-19500/424B)
半导体器件 二极管 硅 快速恢复 功率整流器 1N5186、1N5187、1n5.188和1N5190 JAN、JANTX和JANTXV（使用MIL-S-19500/411）（取代MIL-S-19500m/424）（由MIL-PRF-19500/424B代替S/S）
2001-08-20