作废 SJ 1943-1981
2CL、2DL12~20型高压硅堆 2CL、2DL12~20型高压硅堆 Detail specification for high voltage silicon rectifier stacks,Type 2CL12~20 and 2DL12~20
发布日期:1981-01-03
实施日期:1982-07-01
分类信息
标准简介
相似标准/计划/法规
SJ 20066-1992
半导体分立器件 2CL3型硅高压整流堆详细规范
Semiconductor discrete device Detail specification for type 2CL3 silicon high voltage rectifier stack
1992-11-19
SJ 797-1974
3DG161型NPN硅平面高频小功率高反压三极管
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
1974-10-01
SJ/T 1486-2016
半导体分立器件 3CG180型硅PNP高频高反压小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG180 high frequency high voltage low power PNP silicon transistor
2016-04-05
SJ 20176-1992
半导体分立器件 3DG3439型和3DG3440型NPN硅小功率高反压晶体管详细规范
Semiconductor discrete device Detail specification for NPN silicon low-power high-reverse-voltage transistor of types 3DG3499 and 3DG3440
1992-11-19
SJ 20016-1992
半导体分立器件 GP,GT和GCT级 3DG182型NPN硅小功率高反压晶体管详细规范
Semiconductor discrete device Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP、GT and types GCT classes
1992-02-01
高压CL

最后更新时间 2025-08-27