作废 SJ 1982-1981
N沟道结型场效应半导体管 CS9型高频场效应半导体管 N沟道结型场效应半导体管 CS9型高频场效应半导体管 Detail specification for high frequency field-effect transistors,Type CS9
发布日期:1982-01-03
实施日期:1982-07-01
分类信息
标准简介
相似标准/计划/法规
SJ 20184-1992
半导体分立器件 CS3821、3822、3823型场效应晶体管详细规范
Semiconductor discrete device Detail specification for field-effect transistor of types CS3821、3822、3823
1992-11-19
SJ 50033/1-1994
半导体分立器件 3DA150型高频功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DA150 high frequency and power transistor
1994-09-30
SJ 50033/103-1996
半导体分立器件 3DA89型高频功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DA89 high-frequency power transistor
1996-08-30
SJ 50033.52-1994
半导体分立器件 CS0529型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0529 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033.54-1994
半导体分立器件 CS0532型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0532 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033/119-1997
半导体分立器件 CS204型砷化镓微波功率 场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
SJ 50033/120-1997
半导体分立器件 CS205型砷化镓微波功率 场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
SJ 50033/63-1995
半导体分立器件 3CD020型低频大功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3CD020 Low -- Frequency and high -- Power transistor
1995-05-25
SJ 50033/64-1995
半导体分立器件 3CD010型低频大功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3CD010 Low -- Frequency and high -- Power transistor
1995-05-25
SJ 50033/65-1995
半导体分立器件 3DD175型低频大功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DD175 Low -- Frequency and high -- Power transistor
1995-05-25
SJ 50033/66-1995
半导体分立器件 3DD880型低频大功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3CD880 Low -- Frequency and high -- Power transistor
1995-05-25
SJ 50033/92-1995
半导体分立器件 3CD100型低频大功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3CD100 low-frequency and high-power transistor
1995-05-25
SJ 50033/129-1997
半导体分立器件3DD155型低频大功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DD155 low-frequency and high -- Power transistor
1997-06-17
SJ 50033/130-1997
半导体分立器件3DD159型低频大功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DD159 low -- Frequency and high -- Power transistor
1997-06-17
SJ 50033/131-1997
半导体分立器件3DD157型低频大功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DD157 low -- Frequency and high -- Power transistor
1997-06-17
SJ 50033/132-1997
半导体分立器件3DD260型低频大功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DD260 low -- Frequency and high -- Power transistor
1997-06-17
SJ 50033/134-1997
半导体分立器件3DD167型低频大功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DD167 low -- Frequency and high -- Power transistor
1997-06-17
SJ/T 11227-2000
电子元器件详细规范 3DA98型NPN硅高频大功率晶体管
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor
2000-08-16
SJ 50033.53-1994
半导体分立器件 CS0530、CS0531型砷化镓微波功率场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
1994-09-30
SJ 50033/106-1996
半导体分立器件 CS203型砷化镓微波低噪声场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS203 GaAs microwave low noise field effect transistor
1996-08-30
半导体沟道效应结型场

最后更新时间 2025-08-27