作废 SJ 1990-1981
CS20型N沟道结型场效应管 CS20型N沟道结型场效应管 Detail specification for N channel junction pair field-effect transistors,Type CS20
发布日期：1982-01-03
实施日期：1982-07-01
分类信息
发布单位或类别： 中国 行业标准-电子
CCS分类： L44电子元器件与信息技术 - 半导体分立器件 - 场效应器件
ICS分类：
标准简介
相似标准/计划/法规
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SJ 50033/122-1997
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SJ 20061-1992
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Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146
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SJ 50033/84-1995
半导体分立器件 ＣＳ１４０型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/85-1995
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Semiconductor discrete device Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/87-1995
半导体分立器件 ＣＳ４０９１～ＣＳ４０９３型硅Ｎ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ４０９１～ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/88-1995
半导体分立器件 ＣＳ６７６０和ＣＳ６７６２型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/89-1995
半导体分立器件 ＣＳ６７６８和ＣＳ６７７０型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/38-1994
半导体分立器件 CS4856～CS4861型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS4856～CS4861 silicon N-channel deplition mode field-effect transistor
1994-09-30
SJ 20011-1992
半导体分立器件 GP,GT和GCT级 CS1型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes
1992-02-01
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半导体分立器件 GP,GT和GCT级 CS4型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes
1992-02-01
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半导体分立器件 GP,GT和GCT级 CS10型硅N沟道耗尽型场效应晶体管
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes
1992-02-01
沟道场效应管

最后更新时间 2025-08-27