JB/T 9241-1999
辐射感温器技术条件
Specification for industrial total radiation pyrometer
1999-08-06
BS 1041-5-1989
Temperature measurement-Guide to selection and use of radiation pyrometers
温度测量
1990-03-30
GOST 10627-1971
Телескопы пирометров суммарного излучения. Градуировочные таблицы
望远镜高温计的建立辐射 校准表
VDI 3786 Sheet 5
Meteorological measurements concerning questions of air pollution; global radiation, direct solar radiation and net total radiation
关于空气污染问题的气象测量；总辐射、太阳直接辐射和净总辐射
1986-08-01
QJ 10004-2008
宇航用半导体器件总剂量辐照试验方法
Total dose radiation testing method of semiconductor devices for space applications
2008-02-16
BS EN IEC 60749-18-2019
Semiconductor devices. Mechanical and climatic test methods-Ionizing radiation (total dose)
半导体器件 机械和气候试验方法
2019-06-10
ASTM F1892-12(2018)
Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
半导体器件电离辐射（总剂量）效应试验标准指南
2018-03-01
SJ/T 11586-2016
半导体器件10KeV低能X射线总剂量辐照试验方法
10keV X-ray total dose radiation testing method of semiconductor devices
2016-01-15
UNE-EN 60749-18-2003
Semiconductor devices - Mechanical and climatic test methods -- Part 18: Ionizing radiation (total dose)
半导体器件机械和气候试验方法第18部分:电离辐射（总剂量）
2003-11-21
KS C IEC 60749-18(2016 Confirm)
반도체 소자－기계 및 기후적 환경 시험 방법－제18부：이온화 방사(전체 선량)
半导体器件机械和气候试验方法第18部分:电离辐射（总剂量）
2006-11-30
KS C IEC 60749-18
반도체소자 — 기계 및 기후 시험방법 — 제18부：이온화 방사(전체 선량)
半导体器件.机械和气候试验方法.第18部分:电离辐射（总剂量）
2021-12-29
GB/T 4937.18-2018
半导体器件 机械和气候试验方法 第18部分:电离辐照(总剂量)
Semiconductor devices—Mechanical and climatic test methods—Part 18: Ionizing radiation (total dose)
2018-09-17
IEC 60749-18-2019
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)
半导体器件 - 机械和气候测试方法 - 第18部分:电离辐射（总剂量）
2019-04-10
IEC 60749-18-2019 RLV
Semiconductor devices - Mechanical and climatic test methods - Part 18: Ionizing radiation (total dose)
半导体器件.机械和气候试验方法.第18部分:电离辐射（总剂量）
2019-04-10
IEC TR 62002-4-2009
Mobile and portable DVB-T/H radio access - Part 4: Measurement methods for total radiated sensitivity in hand-held broadcast terminals
移动和便携式DVB-T/H无线电接入第4部分:手持广播终端总辐射灵敏度的测量方法
2009-04-07
MIL MIL-PRF-19500/638B Notice 2-Validation
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Type 2N7410, JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单一事件效应）晶体管 N沟道硅 2N7410 Jansd和Jansr
2016-05-24
MIL MIL-PRF-19500/639A Notice 3-Validation
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR
2016-05-24
MIL MIL-PRF-19500/707C Amendment 1
Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR
晶体管 场效应辐射硬化（总剂量和单事件效应）N沟道 硅 2N7500U5、2N7501U5和2N7502U5型 JANTXVR和JANSR
2020-06-01
MIL MIL-PRF-19500/707C
Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR
晶体管 场效应抗辐射（总剂量和单粒子效应） N沟道 硅 2N7500U5、2N7501U5和2N7502U5型 JANTXVR和JANSR
2015-02-11
MIL MIL-PRF-19500/639A Notice 2-Validation
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR
半导体器件 场效应辐射硬化（总剂量和单事件效应）晶体管 P沟道硅2N7411型JANSD和JANSR
2011-07-15