SJ/T 2216-2015
硅光电二极管技术规范
Technical specification for photodiode of silicon
2015-04-30
MIL DESC 5962-89555 Notice B-Revision
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL REGISTERED TRANSCEIVERS, MONOLITHIC SILICON
MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL OCTAL REGISEDED TRANSCEIVERS MONOLITHIC SILICON
1992-08-31
MIL MIL-M-38510/77A Amendment 4
MICROCIRCUITS, DIGITAL, BIPOLAR, SCHOTTKY TTL, DECODERS, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/77)(SEE BASE FOR INACTIVATION NOTICE)
MICROCIRCUITS DIGITAL BIPOLAR SCHOTTKY TTL DECODERS MONOLITHIC SILICON（取代MIL-M-38510/77）（参见无效通知书）
1987-11-05
MIL MIL-S-19500/139B Amendment 1
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, TYPE JAN-2N1119 (SUPERSEDING MIL-S-19500/139A)
半导体器件 晶体管 PNP SILICON 型号JAN-2N1119（SUPEREDING MIL-S-19500/139A）
1967-08-16
T/CGA 011-2017
氰化硅金物料 Silicon-gold material produced from cyanidation process
2018-01-01
MIL DESC 5962-86844A Notice B-Revision
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, NOR GATES, MONOLITHIC SILICON (SUPERSEDING DESC 5962-86844)(S/S BY DSCC 5962-86844D)
MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL NOR GATES MONOLITHIC SILICON（SUPEREDED DESC 5962-86844）（S/S BY DSCC 5962-86844D）
1992-07-10
MIL MIL-S-7108A Notice 1-Cancellation
STEEL, ALLOY (MAGANESE-SILICON-NICKEL), BARS AND FORGING STOCK (AIRCRAFT QUALITY) (ASG)(SUPERSEDING MIL-S-7108) (S/S BY SAE-AMS6425B)
钢、合金（maganes-SILICON-NICKEL）、棒材和锻件（飞机质量）（ASG）（取代MIL-S-7108）（由SAE-AMS6425B提供）
1997-05-09
SJ/T 2214-2015
半导体光电二极管和光电晶体管测试方法
Measuring methods for semiconductor photodiode and phototransistor
2015-04-30
GB/T 23729-2009
闪烁探测器用光电二极管 试验方法
Photodiodes for scintillation detectors - Test procedures
2009-05-06
SJ/T 2354-2015
ＰＩＮ、雪崩光电二极管测试方法
Measuring methods for photodiodes of PIN、APD
2015-04-30
MIL MIL-M-38510/400A Notice 1-Validation 1
MICROCIRCUITS, DIGITAL, N-CHANNEL, SILICON-GATE MONOLITHIC 8 BIT MICROPROCESSOR (FIXED INSTRUCTION) (SUPERSEDING MIL-M-38510/400)(SEE BASE FOR INACTIVATION NOTICE)
MICROCIRCUITS DIGITAL N-CHANNEL SILICON-GATE单晶8位微处理器（固定指令）（取代MIL-M-38510/400）（见基地用于灭活通知）
1988-11-30
MIL MIL-M-38510/400A Notice 2-Validation 2
MICROCIRCUITS, DIGITAL, N-CHANNEL, SILICON-GATE MONOLITHIC 8 BIT MICROPROCESSOR (FIXED INSTRUCTION) (SUPERSEDING MIL-M-38510/400)(SEE BASE FOR INACTIVATION NOTICE)
MICROCIRCUITS DIGITAL N-CHANNEL SILICON-GATE单晶8位微处理器（固定指令）（取代MIL-M-38510/400）（见基地用于灭活通知）
2001-05-03
DIN EN 120005
Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
空白详细规范.光电二极管 光电二极管阵列（不适用于光纤应用）；德文版EN 120005:1992
1996-11-01
JIS C 5991-1997
Measuring methods of photodiodes for fiber optic transmission
光纤传输用光电二极管的测量方法
1997-01-01
JIS C 5990-1997
General rules of photodiodes for fiber optic transmission
光纤传输用光电二极管通则
1997-01-01
BS EN 120005-1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
电子元件质量评定协调体系规范 空白详细规范 光电二极管、光电二极管阵列（不适用于光纤应用）
1986-11-15
IEC 62088-2001
Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures
核仪器 - 用于闪烁探测器的光电二极管 - 测试程序
2001-06-11
SJ 50033/102-1995
ＧＤ２１８型ＩｎＧａＡｓ／ＩｎＰ ＰＩＮ光电二极管详细规范
Detail specification for InGaAs/InP photodiode for type GD 218
1996-06-14
SJ 50033/112-1996
半导体光电子器件 ＧＤ３２５１Ｙ型光电二极管详细规范
Semiconductor discrete device Detail specification for type GD3251Y photodiodes
1996-08-30
SJ 50033/113-1996
半导体光电子器件 ＧＤ３２５２Ｙ型光电二极管详细规范
Semiconductor discrete device Detail specification for type GD3252Y photodiodes
1996-08-30