SJ/T 2217-2014
硅光电晶体管技术规范
Technical specification for phototransistor of silicon
2014-10-14
MIL DESC 5962-89555 Notice B-Revision
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL REGISTERED TRANSCEIVERS, MONOLITHIC SILICON
MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL OCTAL REGISEDED TRANSCEIVERS MONOLITHIC SILICON
1992-08-31
MIL MIL-M-38510/77A Amendment 4
MICROCIRCUITS, DIGITAL, BIPOLAR, SCHOTTKY TTL, DECODERS, MONOLITHIC SILICON (SUPERSEDING MIL-M-38510/77)(SEE BASE FOR INACTIVATION NOTICE)
MICROCIRCUITS DIGITAL BIPOLAR SCHOTTKY TTL DECODERS MONOLITHIC SILICON（取代MIL-M-38510/77）（参见无效通知书）
1987-11-05
MIL MIL-S-19500/139B Amendment 1
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, TYPE JAN-2N1119 (SUPERSEDING MIL-S-19500/139A)
半导体器件 晶体管 PNP SILICON 型号JAN-2N1119（SUPEREDING MIL-S-19500/139A）
1967-08-16
DIN EN 120003
Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
空白详细规范.光电晶体管 光电阿灵顿晶体管 光电晶体管阵列；德文版EN 120003:1992
1996-11-01
SJ/T 2214-2015
半导体光电二极管和光电晶体管测试方法
Measuring methods for semiconductor photodiode and phototransistor
2015-04-30
T/CGA 011-2017
氰化硅金物料 Silicon-gold material produced from cyanidation process
2018-01-01
MIL DESC 5962-86844A Notice B-Revision
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, NOR GATES, MONOLITHIC SILICON (SUPERSEDING DESC 5962-86844)(S/S BY DSCC 5962-86844D)
MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW POWER SCHOTTKY TTL NOR GATES MONOLITHIC SILICON（SUPEREDED DESC 5962-86844）（S/S BY DSCC 5962-86844D）
1992-07-10
MIL MIL-S-7108A Notice 1-Cancellation
STEEL, ALLOY (MAGANESE-SILICON-NICKEL), BARS AND FORGING STOCK (AIRCRAFT QUALITY) (ASG)(SUPERSEDING MIL-S-7108) (S/S BY SAE-AMS6425B)
钢、合金（maganes-SILICON-NICKEL）、棒材和锻件（飞机质量）（ASG）（取代MIL-S-7108）（由SAE-AMS6425B提供）
1997-05-09
BS EN 120003-1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
电子元件质量评定协调体系规范 空白详细规范 光电晶体管 光电阿灵顿晶体管 光电晶体管阵列
1986-11-15
MIL MIL-M-38510/400A Notice 1-Validation 1
MICROCIRCUITS, DIGITAL, N-CHANNEL, SILICON-GATE MONOLITHIC 8 BIT MICROPROCESSOR (FIXED INSTRUCTION) (SUPERSEDING MIL-M-38510/400)(SEE BASE FOR INACTIVATION NOTICE)
MICROCIRCUITS DIGITAL N-CHANNEL SILICON-GATE单晶8位微处理器（固定指令）（取代MIL-M-38510/400）（见基地用于灭活通知）
1988-11-30
MIL MIL-M-38510/400A Notice 2-Validation 2
MICROCIRCUITS, DIGITAL, N-CHANNEL, SILICON-GATE MONOLITHIC 8 BIT MICROPROCESSOR (FIXED INSTRUCTION) (SUPERSEDING MIL-M-38510/400)(SEE BASE FOR INACTIVATION NOTICE)
MICROCIRCUITS DIGITAL N-CHANNEL SILICON-GATE单晶8位微处理器（固定指令）（取代MIL-M-38510/400）（见基地用于灭活通知）
2001-05-03
SJ 50033/111-1996
半导体光电子器件 ＧＴ１６型硅ＮＰＮ光电晶体管详细规范
Semiconductor optoelectronic devices Detail specification for type GT16 Si.NPN phototransistor
1996-08-30
GB/T 15651.7-2024
半导体器件 第5-7部分：光电子器件 光电二极管和光电晶体管
Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors
2024-03-15
IEC 60747-5-7-2016
Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
半导体器件 - 第5-7部分:光电器件 - 光电二极管和光电晶体管
2016-02-23
BS 11/30252930 DC
BS EN 60747-5-7. Semiconductor devices. Discrete devices. Part 5-7. Photodiodes and phototransistors
英国标准EN 60747-5-7 半导体器件 离散设备 第5-7部分 光电二极管和光电晶体管
2011-09-07
BS EN 120004-1993
Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Ambient rated photocouplers with phototransistor output
电子元件质量评定协调体系规范 空白详细规范 具有光电晶体管输出的环境额定光电耦合器
1988-05-15
DIN EN 60747-5-7-DRAFT
Draft Document - Semiconductor devices - Discrete devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors (IEC 47E/420/CD:2011)
文件草案-半导体器件-分立器件-第5-7部分:光电子器件-光电二极管和光电晶体管（IEC 47E/420/CD:2011）
2011-12-01
YB/T 4766-2019
耐火材料用工业硅中单质硅和二氧化硅的测定方法
Chemical analysis of elemental silicon and silicon dioxide in industrial silicon for refractories
2019-08-27
GB/T 14683-2017
硅酮和改性硅酮建筑密封胶
Silicone and modified silicone sealants for building
2017-09-07