SJ 20061-1992
半导体分立器件 CS146型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of type CS146
1992-11-19
SJ 50033/83-1995
半导体分立器件 ＣＳ１３９型硅Ｐ沟道ＭＯＳ增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/84-1995
半导体分立器件 ＣＳ１４０型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS140 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/85-1995
半导体分立器件 ＣＳ１４１型硅Ｎ沟道ＭＯＳ耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS141 silicon N-channel MOS enhancement mode field-effect transistor
1995-05-25
SJ 50033/86-1995
半导体分立器件 ＣＳ５１１４～ＣＳ５１１６型硅Ｐ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ５１１４～ＣＳ５１１６ silicon P-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/87-1995
半导体分立器件 ＣＳ４０９１～ＣＳ４０９３型硅Ｎ沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ４０９１～ＣＳ４０９３ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/88-1995
半导体分立器件 ＣＳ６７６０和ＣＳ６７６２型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６０and ＣＳ６７６２ silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/89-1995
半导体分立器件 ＣＳ６７６８和ＣＳ６７７０型硅Ｎ沟道增强型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type ＣＳ６７６8and ＣＳ６７70 silicon N-channel deplition mode field-effect transistor
1995-05-25
SJ 50033/38-1994
半导体分立器件 CS4856～CS4861型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for type CS4856～CS4861 silicon N-channel deplition mode field-effect transistor
1994-09-30
SJ 50033/121-1997
半导体分立器件CS3458-CS3460型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS3458-CS3460 silicon N-channel junction mode field-effect transistors
1997-06-17
SJ 50033/122-1997
半导体分立器件CS3684-CS3687型硅N沟道结型场效应晶体管详细规范
Semiconductor discrete devices Detail specification for type CS3684-CS3687 silicon N-channel junction mode field-effect transistors
1997-06-17
SJ 20011-1992
半导体分立器件 GP,GT和GCT级 CS1型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS1 GP, GT and GCT classes
1992-02-01
SJ 20012-1992
半导体分立器件 GP,GT和GCT级 CS4型硅N沟道耗尽型场效应晶体管详细规范
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS4 GP, GT and GCT classes
1992-02-01
SJ 20013-1992
半导体分立器件 GP,GT和GCT级 CS10型硅N沟道耗尽型场效应晶体管
Semiconductor discrete device Detail specification for silicon N-channel depletion mode field-effect transistor of types CS10 GP, GT and GCT classes
1992-02-01
MIL MIL-PRF-19500/375G Notice 1-Validation
Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, and 2N3823UB, JAN, JANTX, JANTXV, and JANS
半导体器件晶体管场效应N沟道损耗模硅类型2N3821 2N3821UB 2N3822 2N3822UB 2N3823和2N3823UB JANTX JANTXV和JANS
2009-04-02
MIL MIL-PRF-19500/375H
Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, and 2N3823UB, JAN, JANTX, JANTXV, and JANS
半导体器件 晶体管 场效应 N沟道 耗尽模式 硅 类型2N3821 2N3821UB 2N3822 2N3822UB 2N3823和2N3823UB JAN JANTX JANTXV和JANS
2011-07-21
MIL MIL-PRF-19500/375J Notice 1-Validation
Semiconductor Device, Transistor, Field-Effect, N-Channel, Depletion Mode, Silicon,Types 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, and 2N3823UB, JAN, JANTX, JANTXV, and JANS
半导体器件 晶体管 场效应 N沟道 耗尽模式 硅 类型2N3821 2N3821UB 2N3822 2N3822UB 2N3823和2N3823UB JAN JANTX JANTXV和JANS
2016-10-21
MIL MIL-PRF-19500/375G Notice 1-Validation 1
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/375F)
半导体器件 晶体管 场效应 N沟道 耗尽模式 硅 类型2N3821 2N3821UB 2N3822 2N3822UB 2n382 3和2N3823UB JAN JANTX JANTXV和JANS（取代MIL-PRF-19500/375F）
2009-04-02
MIL MIL-PRF-19500/375J Notice 1-Validation 1
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/375H)
半导体器件 晶体管 场效应 N沟道 耗尽模式 硅 类型2N3821 2N3821UB 2N3822 2N3822UB 2n382 3和2N3823UB JAN JANTX JANTXV和JANS（取代MIL-PRF-19500/375H）
2016-10-21
MIL MIL-PRF-19500/375K
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS (SUPERSEDING MIL-PRF-19500/375H)
半导体器件 晶体管 场效应 N沟道 耗尽模式 硅 类型2N3821 2N3821UB 2N3822 2N3822UB 2N3823和2N3823UB JAN JANTX JANTXV和JANS（取代MIL-PRF-19500/375H）
2017-06-02