T/IAWBS 002-2017
碳化硅外延片表面缺陷测试方法
2017-12-20
GB/T 42902-2023
碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
2023-08-06
T/IAWBS 020-2024
碳化硅外延层深能级缺陷的测试 瞬态电容法
2024-02-27
BS IEC 63068-2-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-02-08
BS IEC 63068-1-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-05-10
BS IEC 63068-3-2020
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2020-07-24
SJ/T 11504-2015
碳化硅单晶抛光片表面质量的测试方法
Test method for measuring surface quality of polished monocrystalline silicon carbide
2015-04-30
SJ/T 11503-2015
碳化硅单晶抛光片表面粗糙度的测试方法
Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers
2015-04-30
GB/T 43493.1-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
2023-12-28
GB/T 43493.2-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
2023-12-28
GB/T 43493.3-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
2023-12-28
SJ 21633-2021
碳化硅外延材料少子寿命的激光微波光电导衰减测试方法
T/IAWBS 014-2021
碳化硅单晶抛光片位错密度的测试方法
2021-09-15
GB/T 43313-2023
碳化硅抛光片表面质量和微管密度的测试 共焦点微分干涉法
Test method for surface quality and micropipe density of polished silicon carbide wafers—Confocal and differential interferometry optics
2023-11-27
T/IAWBS 012-2019
碳化硅单晶抛光片表面质量和微管密度测试方法 ——共焦点微分干涉光学法
2019-12-27
IEC 63068-2-2019
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第2部分:光学检验缺陷的试验方法
2019-01-30
T/IAWBS 010-2019
碳化硅单晶抛光片表面质量和微管密度检测方法-激光散射检测法
2019-12-27
KS C IEC 63068-3
반도체 소자 — 전력 소자용 탄화규소 호모에피택셜 웨이퍼의 결함에 대한 비파괴 인식 기준 — 제3부: 광발광을 사용한 결함 검사 방법
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法
2025-01-31
IEC 63068-3-2020
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
半导体器件.功率器件用碳化硅同质外延片中缺陷的无损识别标准.第3部分:用光致发光法检测缺陷的试验方法
2020-07-13
KS C IEC 63068-2
반도체 소자 — 전력 소자용 탄화규소 호모에피택셜 웨이퍼의 결함에 대한 비파괴 인식 기준 — 제2부: 광학 검사를 사용한 결함 검사 방법
半导体器件 功率器件用碳化硅同质外延晶片缺陷的无损识别准则 第2部分:用光学检查法检测缺陷的试验方法
2025-01-31