SJ 50033/74-1995
半导体分立器件 ３ＤＡ３２５型硅微波功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DA325 silicon microwave power tansistor
1995-05-25
SJ 50033/77-1995
半导体分立器件 ３ＤＡ３３１型硅微波功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA331 Silicon microwave power tansistor
1995-05-25
SJ 50033/140-1999
半导体分立器件3DA502型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA502 silicon microwave pulse power transistor
1999-02-02
SJ 50033/145-2000
半导体分立器件 3DA503型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA503 silicon microwave pulse power transistor
2000-10-20
SJ 50033/156-2002
半导体分立器件 3DA505型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA505 silicon microwave pulse power transistor
2002-10-30
SJ 50033/157-2002
半导体分立器件 3DA506型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA506 silicon microwave pulse power transistor
2002-10-30
SJ 50033/166-2004
半导体分立器件3DA507型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor
2004-08-02
SJ 50033/167-2004
半导体分立器件3DA508型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor
2004-08-02
SJ 50033/168-2004
半导体分立器件3DA509型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor
2004-08-02
SJ 50033/169-2004
半导体分立器件3DA510型硅微波脉冲功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor
2004-08-02
SJ 50033/170-2007
半导体分立器件 3DA516型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA516 silicon microwave pulse power transistor
2008-01-24
SJ 50033/171-2007
半导体分立器件 3DA518型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA518 silicon microwave pulse power transistor
2008-01-24
SJ 50033/172-2007
半导体分立器件 3DA519型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA519 silicon microwave pulse power transistor
2008-01-24
SJ 50033/173-2007
半导体分立器件 3DA520型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA520 silicon microwave pulse power transistor
2008-01-24
SJ 50033/174-2007
半导体分立器件 3DA521型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA521 silicon microwave pulse power transistor
2008-01-24
SJ 50033/175-2007
半导体分立器件 3DA522型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA522 silicon microwave pulse power transistor
2008-01-24
SJ 50033/176-2007
半导体分立器件 3DA523型硅微波脉冲功率晶体管详细规范
Semiconductro discrete devices Detail specification for type 3DA523 silicon microwave pulse power transistor
2008-01-24
BS 9364 N007 AND N009-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
BS 9364 N013-1979
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 25伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N016-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15