SJ 797-1974
3DG161型NPN硅平面高频小功率高反压三极管
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
1974-10-01
SJ 20059-1992
半导体分立器件 3DG111型NPN硅高频小功率晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN high-frequency low-power transistor of type 3DG111
1992-11-19
SJ 20060-1992
半导体分立器件 3DG120型NPN硅高频小功率晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN high-frequency low-power transistor of type 3DG120
1992-11-19
SJ 50033/93-1995
半导体分立器件 ３ＤＧ１４２型ＮＰＮ硅高频低噪声小功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DG142 NPN silicon high-frequency low-noise low-power transistor
1996-06-14
SJ 50033/94-1995
半导体分立器件 ３ＤＧ１４３型ＮＰＮ硅高频低噪声小功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DG143 NPN silicon high-frequency low-noise low-power transistor
1996-06-14
SJ 50033/95-1995
半导体分立器件 ３ＤＧ１４４型ＮＰＮ硅高频低噪声小功率晶体管详细规范
Semiconductor discrete device Detail specification for type 3DG144 NPN silicon high-frequency low-noise low-power transistor
1996-06-14
SJ 20175-1992
半导体分立器件 3DG918型NPN硅超高频小功率晶体管详细规范
Semiconductor discrete device Detail specification for NPN silicon ultra-high frequency low-power transistor of type 3DG918
1992-11-19
BS 9364 N007 AND N009-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
BS 9364 N013-1979
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 25伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N016-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N011-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
SJ 20062-1992
半导体分立器件 3DG210型NPN硅超高频低噪声差分对晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210
1992-11-19
SJ 20063-1992
半导体分立器件 3DG213型NPN硅超高频低噪声双差分对晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG213
1992-11-19
BS 9364 N012-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1978-07-15
BS 9364 N017-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1979-01-15
BS 9364 N008 AND N010-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1978-07-15