GB/T 14139-2019
硅外延片
Silicon epitaxial wafers
2019-06-04
GB/T 44334-2024
埋层硅外延片
Silicon epitaxial wafers with buried layers
2024-08-23
GB/T 14015-1992
硅-蓝宝石外延片
Silicon on sapphire epitaxial wafers
1992-12-28
GB/T 35310-2017
200mm硅外延片
200mm silicon epitaxial wafer
2017-12-29
T/IAWBS 002-2017
碳化硅外延片表面缺陷测试方法
2017-12-20
SJ 21493-2018
碳化硅外延片表面缺陷测试方法
T/ZZB 2833-2022
高压MOSFET用200 mm硅外延片
2022-12-08
SJ 20514A-2018
微波功率晶体管用硅外延片规范
GB/T 42902-2023
碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
2023-08-06
BS IEC 63068-2-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using optical inspection
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-02-08
BS IEC 63068-1-2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Classification of defects
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2019-05-10
BS IEC 63068-3-2020
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices-Test method for defects using photoluminescence
半导体器件 功率器件用碳化硅同质外延片缺陷的无损识别准则
2020-07-24
GB/T 43493.1-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第1部分：缺陷分类
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
2023-12-28
GB/T 4058-2009
硅抛光片氧化诱生缺陷的检验方法
Test method for detection of oxidation induced defects in polished silicon wafers
2009-10-30
GB/T 43493.2-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第2部分：缺陷的光学检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
2023-12-28
GB/T 43493.3-2023
半导体器件 功率器件用碳化硅同质外延片缺陷的无损检测识别判据 第3部分：缺陷的光致发光检测方法
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
2023-12-28
GB/T 24575-2009
硅和外延片表面Na、Al、K和Fe的二次离子质谱检测方法
Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry
2009-10-30
T/ICMTIA SM006-2021
集成电路线宽65nm-14nm逻辑工艺用300mm P/P-型硅外延片
2021-05-31