SJ 797-1974
3DG161型NPN硅平面高频小功率高反压三极管
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
1974-10-01
SJ/T 1838-2016
半导体分立器件 3DK29型NPN硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK29
2016-04-05
SJ 50033/82-1995
半导体分立器件 ３ＤＫ１００型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for type 3DK100 NPN silicon low-power switching transistor
1995-05-25
SJ 50033/90-1995
半导体分立器件 ３ＤＫ１０６型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for type 3DK106 NPN silicon low -- Power switching transistor
1995-05-25
SJ 20054-1992
半导体分立器件 3DK101型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK101
1992-11-19
SJ 20055-1992
半导体分立器件 3DK102型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK102
1992-11-19
SJ 20056-1992
半导体分立器件 3DK103型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK103
1992-11-19
SJ 20057-1992
半导体分立器件 3DK104型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK104
1992-11-19
SJ 20058-1992
半导体分立器件 3DK105型NPN硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for silicon NPN low power switching transistor of type 3DK105
1992-11-19
SJ/T 1830-2016
半导体分立器件 3DK101型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK101
2016-04-05
SJ/T 1834-2016
半导体分立器件 3DK104型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK104
2016-04-05
SJ/T 1826-2016
半导体分立器件 3DK100型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK100
2016-04-05
SJ/T 1832-2016
半导体分立器件 3DK102型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK102
2016-04-05
SJ/T 1839-2016
半导体分立器件 3DK108型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK108
2016-04-05
SJ/T 1831-2016
半导体分立器件 3DK28型ＮＰＮ硅小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for silicon NPN low power switching transistor type 3DK28
2016-04-05
BS 9364 N007 AND N009-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
BS 9364 N013-1979
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 25伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N016-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N011-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
SJ 20177-1992
半导体分立器件 3CK3634～3CK3637型PNP硅小功率开关晶体管详细规范
Semiconductor discrete device Detail specification for NPN silicon low-power switching transistor for type 3CK3634～3CK3637
1992-11-19