SJ 797-1974
3DG161型NPN硅平面高频小功率高反压三极管
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
1974-10-01
BS 9364 N007 AND N009-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
BS 9364 N013-1979
Detail specification for low power silicon p-n-p switching transistors. 25 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 25伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N016-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1979-01-15
BS 9364 N011-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15
SJ 50033/179-2018
半导体分立器件 3CK2904、3CK2905型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK2904 and3CK2905 high frequency low power switching PNP silicon transistors
2018-01-18
SJ 50033/182-2018
半导体分立器件 3CK3250、3CK3250UB型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK3250 and3CK3250UB high frequency low power switching PNP silicon transistors
2018-01-18
SJ 50033/183-2018
半导体分立器件 3CK3251、3CK3251UB型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK3251 and3CK3251UB high frequency low power switching PNP silicon transistors
2018-01-18
BS 9364 N012-1978
Detail specification for low power silicon p-n-p switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅p-n-p开关晶体管详细规范 65伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1978-07-15
BS 9364 N017-1979
Detail specification for low power silicon n-p-n switching transistors. 65 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 65伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1979-01-15
BS 9364 N008 AND N010-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation (long lead version). Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装（长引线版本） 完整加额外评估级别
1978-07-15
SJ/T 1480-2016
半导体分立器件 3CG130型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG130 high frequency low power PNP silicon transistor
2016-04-05
SJ/T 1477-2016
半导体分立器件 3CG120型硅PNP高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG120 high frequency low power PNP silicon transistor
2016-04-05
SJ/T 1472-2016
半导体分立器件 3CG110型硅ＰＮＰ高频小功率晶体管详细规范
Semiconductor discrete devices Detail specification for type 3CG110 high frequency low power PNP silicon transistor
2016-04-05
SJ 50033/2-1994
半导体分立器件 3CK2904、3CK2904A、3CK2905和3CK2905A型PNP硅小功率开关晶体管详细规范
Semiconductor discret device Detail specification for type 3CK2904,3CK2904A、3CK2905 and 3CK2905A PNP silicon cow-power switching transistor
1994-09-30
SJ 50033/187-2018
半导体分立器件 3CA3741、3CA3741U1型硅PNP高频大功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CA3741 and3CA3741Ul high frequency power switching PNP silicon transistors
2018-01-18
SJ 50033/189-2018
半导体分立器件 3CK3634、3CK3634UB型硅PNP高频大功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK3634 and3CK3634UB high frequency power switching PNP silicon transistors
2018-01-18
SJ 50033/190-2018
半导体分立器件 3CK3635、3CK3635UB型硅PNP高频大功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK3635 and3CK3635UB high frequency power switching PNP silicon transistors
2018-01-18
SJ 50033/180-2018
半导体分立器件 3CK2906、3CK2906UA、3CK2906UB型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK2906,3CK2906UA and 3CK2906UB high frequency low power switching PNP silicontransistors
2018-01-18
SJ 50033/181-2018
半导体分立器件 3CK2907、3CK2907UA、3CK2907UB型硅PNP高频小功率开关晶体管详细规范
Semiconductor discrete devices Detail specification for types 3CK2907,3CK2907UA and 3CK2907UB high frequency low power switching PNP silicontransistors
2018-01-18