GB/T 30652-2023
硅外延用三氯氢硅
Trichlorosilane for silicon epitaxial
2023-08-06
GB/T 14139-2019
硅外延片
Silicon epitaxial wafers
2019-06-04
GB/T 35310-2017
200mm硅外延片
200mm silicon epitaxial wafer
2017-12-29
GB/T 14015-1992
硅-蓝宝石外延片
Silicon on sapphire epitaxial wafers
1992-12-28
GB/T 43885-2024
碳化硅外延片
Silicon carbide epitaxial wafers
2024-04-25
GB/T 44334-2024
埋层硅外延片
Silicon epitaxial wafers with buried layers
2024-08-23
YS/T 1060-2015
硅外延用三氯氢硅中其他氯硅烷含量的测定 气相色谱法
Determination of other chlorosilane in trichlorosilane for silicon eqitaxy—Gas chromatographic method
2015-04-30
YS/T 1059-2015
硅外延用三氯氢硅中总碳的测定 气相色谱法
Determination of total carbon content in trichlorosilane for silicon eqitaxy—Gas chromatographic method
2015-04-30
GB/T 29056-2012
硅外延用三氯氢硅化学分析方法 硼、铝、磷、钒、铬、锰、铁、钴、镍、铜、钼、砷和锑量的测定 电感耦合等离子体质谱法
Trichlorosilane for silicon epitaxy - Determination of boron，aluminium，phosphorus，vanadium，chrome，manganese，iron，cobalt，nickel，copper，molybdenum，arsenic and antimony content - Inductively coupled plasma mass spectrometric method
2012-12-31
GB/T 14142-2017
硅外延层晶体完整性检验方法 腐蚀法
Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
2017-09-29
GB/T 14146-2021
硅外延层载流子浓度的测试 电容-电压法
Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
2021-05-21
GB/T 42905-2023
碳化硅外延层厚度的测试 红外反射法
Test method for thickness of silicon carbide epitaxial layer—Infrared reflectance method
2023-08-06
GB/T 14847-2010
重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
2011-01-10
KS C IEC 63229
반도체 소자 — 탄화규소 기판 상의 질화갈륨 에피택셜 필름의 결함 분류
半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类
2025-01-31
IEC 63229-2021
Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
半导体器件.碳化硅衬底上氮化镓外延膜缺陷的分类
2021-04-07
GB/T 42902-2023
碳化硅外延片表面缺陷的测试 激光散射法
Test method for surface defects on silicon carbide epitaxial wafers—Laser scattering method
2023-08-06
DL/T 2310-2021
电力系统高压功率器件用碳化硅外延片使用条件
Acceptance specification for silicon carbide epitaxial wafer of high voltage power devices in the grid system
2021-04-26
GB/T 14141-2009
硅外延层、扩散层和离子注入层薄层电阻的测定 直排四探针法
Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
2009-10-30
SJ 797-1974
3DG161型NPN硅平面高频小功率高反压三极管
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
1974-10-01
BS 9364 N007 AND N009-1978
Detail specification for low power silicon n-p-n switching transistors. 20 V, planar epitaxial, ambient rated, hermetic encapsulation. Full plus additional assessment level
低功率硅n-p-n开关晶体管详细规范 20伏 平面外延 环境额定 密封封装 完整加额外评估级别
1978-07-15